maximum ratings: (t c =25c) symbol bsx62 BSX63 units collector-base voltage v cbo 60 80 v collector-emitter voltage v ceo 40 60 v emitter-base voltage v ebo 5.0 v collector current i c 3.0 a power dissipation p d 5.0 w operating and storage junction temperature t j , t stg -65 to +200 c thermal resistance jc 35 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min typ max units i cbo v cb =40v (bsx62) 100 na i cbo v cb =40v, t c =150c (bsx62) 100 a i cbo v cb =60v (BSX63) 100 na i cbo v cb =60v, t c =150c (BSX63) 100 a i ebo v eb =5.0v 100 na v ce(sat) i c =1.0a, i b =100ma 0.7 v v ce(sat) i c =2.0a, i b =200ma 0.8 v v be(sat) i c =1.0a, i b =100ma 1.2 v v be(sat) i c =2.0a, i b =200ma 1.3 v v be(on) v ce =1.0v, i c =100ma 1.0 v v be(on) v ce =1.0v, i c =1.0a 1.2 v v be(on) v ce =5.0v, i c =2.0a 1.3 v h fe v ce =1.0v, i c =1.0a (bsx62, 63-10) 63 160 h fe v ce =1.0v, i c =1.0a (bsx62, 63-16) 100 250 c ob v cb =10v, i e =0, f=1.0mhz 70 pf f t v ce =10v, i c =200ma, f=100mhz 30 mhz t on i c =1.0a, i b1 =i b2 =50ma 300 ns t off i c =1.0a, i b1 =i b2 =50ma 4.0 s bsx62 BSX63 npn silicon transistor to-39 case central semiconductor corp. tm r0 (2-april 2008) description: the central semiconductor bsx62, BSX63 types are npn silicon transistors designed for general purpose applications where high collector current is required. marking: full part number
central semiconductor corp. tm to-39 case - mechanical outline bsx62 BSX63 npn silicon transistor r0 (2-april 2008) lead code: 1) emitter 2) base 3) collector (case) marking: full part number
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